AgGa0.6In0.4Se2晶体的制备与表征

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AgGa0.6In0.4Se2晶体的制备与表征

材料科学与工程 | 更新时间：2023-11-14

- AgGa0.6In0.4Se2晶体的制备与表征
- Preparation and Characterization of AgGa0.6In0.4Se2 Crystals
- 工程科学与技术 2011年43卷第3期页码：194-197
- 作者机构：
- 作者简介：
- 基金信息：
  
  教育部博士点基金资助项目(20040610024)
- DOI：
  中图分类号：
- 纸质出版日期：2011，
  
  网络出版日期：2011-1-10，
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万书权,朱世富,赵北君,陈宝军,何知宇,许建华,刘勇.AgGa0.6In0.4Se2晶体的制备与表征[J].工程科学与技术,2011,43(3):194-197.

Preparation and Characterization of AgGa0.6In0.4Se2 Crystals[J]. Advanced Engineering Sciences, 2011,43(3):194-197.
万书权,朱世富,赵北君,陈宝军,何知宇,许建华,刘勇.AgGa0.6In0.4Se2晶体的制备与表征[J].工程科学与技术,2011,43(3):194-197. DOI：

Preparation and Characterization of AgGa0.6In0.4Se2 Crystals[J]. Advanced Engineering Sciences, 2011,43(3):194-197. DOI：

摘要

中文摘要: 以高纯单质为原料，按AgGa1-xInxSe2（x=0.4）化学计量配比配料(富1%Se)，在双层石英安瓿中，用机械和温度振荡相结合的方法，合成出高纯单相多晶料。差热分析表明，其熔点和凝固点分别为804.3 ℃和775.6 ℃。采用带有籽晶袋、内壁镀碳的双层石英安瓿，用改进的垂直布里奇曼法生长出尺寸为Φ20 mm×60 mm、结构完整的AgGa0.6In0.4Se2单晶体。经X射线衍射仪和红外分光光度计等分析表明，晶体为黄铜矿结构，晶格常数为a=0.602 32 nm

c=1.118 33 nm，其显露面和易解理面为（112）面；厚度约为2 mm的晶片在波长0.836~19.65 μm范围内透过率接近或超过60%，禁带宽度约为1.48 eV。结果表明

改进方法生长的AgGa1-xInxSe2晶体的结构完整，光学质量高，可用于中远红外非线性光学器件制备。

Abstract

Abstract:AgGa0.6In0.4Se2 polycrystalline materials were synthesized by mechanical and temperature oscillation method in a two-layer quartz ampoule using high-purity elements according to the stoichiometry with an excess of 1% Se. The melting and freezing points of the materials were determined to be 804.3 ℃ and 775.6 ℃

respectively

through thermal analysis. A crack-free AgGa0.6In0.4Se2 crystal of Φ20 mm×60 mm was grown by modified vertical Bridgman method in a two-layer carbon coated quartz ampoule with specially designed seed pocket. The crystal was with chalcopyrite structure. The lattice constants of aand cwere 0.602 32 nm and 1.118 33 nm

respectively. The reflection faces and cleavage face were (112) faces. A wafer with 2 mm thickness was cut from the as-grown crystal. Its transmittance was up to or more than 60% in a range of 0.836~19.65 μm. Its calculated band gap was about 1.48 eV. The results proved that the grown crystal was of integral structure and high quality

and it can be used for fabrication of mid-far infrared nonlinear optical devices.

关键词

硒铟镓银单晶性能表征光学材料

Keywords

AgGa1-xInxSe2single crystalscharacterizationoptical materials

references

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