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投稿时间：2006-07-31
投稿时间：2006-07-31
中文摘要: 采用改进Bridgman法生长出外观完整的尺寸为Φ15 mm×35 mm的AgGa1-xInxSe2(x=0.2)单晶锭。其晶格常数为a=0.60125 nm，c=1.10243 nm，为黄铜矿结构，与标准PDF卡片（No.35-1095)吻合。X射线粉末衍射谱图的谱峰尖锐，无杂峰，表明得到的AgGa1-xInxSe2(x=0.2)单晶锭的结晶状态好。对晶锭沿自然显露面解理取样后经X射线衍射发现晶体的自然显露面为(101)面，并观测到{101}晶面族的四级衍射峰，其回摆峰尖锐且半峰宽窄，表明晶体的结晶性完好并且结构完整，同时证实沿(101)晶面自然显露是AgGa1-xInxSe2(x=0.2)晶体生长习性的一种体现。DSC-TG分析表明晶体的熔点和凝固点分别为822.67 ℃和801.58 ℃，总失重约为2.027％。
Abstract:An integral AgGa1-xInxSe2(x=0.2) single crystal with the diameter of 15 mm and length of 35 mm was produced by the modified Bridgman method. Using X ray diffraction the spectrum of AgGa1-xInxSe2 crystal was obtained. The lattice constants of a and c were 0.60125 nm and 1.10243 nm, respectively. The crystal was chalcopyrite structure. The results were in good agreement with the standard PDF card (No. 35-1095). After cleavage along the spontaneous face it was proved that the face was (101) face and the four order X ray spectrum of the {101} face was obtained. Spontaneous showing along the (101) face was the growth characteristic of AgGa1-xInxSe2(x=0.2) crystal. The rocking curve’s peak of the (101) face was sharp and the width value of the half peak was small, which showed that the crystal has integral structure. The melting and freezing points of AgGa1-xInxSe2(x=0.2) were 822.67 ℃ and 801.58 ℃, respectively, which were measured by DSC. The measure results proved that the crystal was of integral structure and high quality.
文章编号：20070220 中图分类号： 文献标志码：
基金项目:教育部博士点基金资助项目(20040610024)
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引用文本：
黄毅,赵北君,朱世富.AgGa1-xInxSe2单晶体生长及结构性能研究[J].工程科学与技术,2007,39(2):107-110.
.Study on the Crystal Growth and Properties of AgGa1-xInxSe2[J].Advanced Engineering Sciences,2007,39(2):107-110.
引用文本：
黄毅,赵北君,朱世富.AgGa1-xInxSe2单晶体生长及结构性能研究[J].工程科学与技术,2007,39(2):107-110.
.Study on the Crystal Growth and Properties of AgGa1-xInxSe2[J].Advanced Engineering Sciences,2007,39(2):107-110.