Studies on Growth of ZnGeP2 Single Crystals

Zhao Xin; Zhu Shi-fu; zhao Bei-jun; 杨慧光; 孙永强; 程江; 陈宝军; 何知宇

您当前的位置：

首页 >

文章列表页 >

Studies on Growth of ZnGeP2 Single Crystals

更新时间：2023-11-28

- Studies on Growth of ZnGeP2 Single Crystals
- Advanced Engineering Sciences Vol. 40, Issue 6, Pages: 101-104(2008)
- 作者机构：
  
  四川大学材料科学与工程学院
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2008，
  
  Published Online：3 September 2008，
扫描看全文
赵欣,朱世富,赵北君,杨慧光,孙永强,程江,陈宝军,何知宇.磷锗锌(ZnGeP2)单晶体生长研究[J].工程科学与技术,2008,40(6):101-104.

Zhao Xin, Zhu Shi-fu, zhao Bei-jun, et al. Studies on Growth of ZnGeP2 Single Crystals. [J]. Advanced Engineering Sciences 40(6):101-104(2008)
赵欣,朱世富,赵北君,杨慧光,孙永强,程江,陈宝军,何知宇.磷锗锌(ZnGeP2)单晶体生长研究[J].工程科学与技术,2008,40(6):101-104. DOI：

Zhao Xin, Zhu Shi-fu, zhao Bei-jun, et al. Studies on Growth of ZnGeP2 Single Crystals. [J]. Advanced Engineering Sciences 40(6):101-104(2008) DOI：

摘要

中文摘要: 摘要：以高纯(6N) Ge、Zn、P单质为原料，按化学计量比并富P 0.1~0.3%配料，在特殊设计的密封安瓿中，采用改进的两温区气相输运法(MTVM)和机械振荡技术合成出单相致密的ZnGeP2多晶原料。以此为原料，采用改进的垂直布里奇曼法(VBM)生长出尺寸为Φ15mm×25mm的 ZnGeP2单晶体，呈黑灰色，外观完整、无裂纹。对晶体进行解理试验发现，其存在(112)和(101)两个易解理面；对10×10×2mm3 ZnGeP2晶片，采用同成分粉末包裹，在550~600℃真空退火后，经红外透过率测试结果显示：在2~12μm波段内红外透过率可达55%以上。

Abstract

Abstract:Abstract：Single-phase ZnGeP2 polycrystals were successfully synthesized by modified two-zone vapor-transporting method（MTVM）and mechanic oscillations technique

directly from high pure(6N) Zn

and red P elements according to the ZnGeP2 stoichiometry and 0.1~0.3% P-rich. The synthesis reaction was carried in a special quartz ampoule to prevent the ampoule exploding by controlling the temperature. With the presynthesized polycrystalline

the integral and gray-black ZnGeP2 single crystals with size of Φ15mm×25mm were obtained by modified Vertical Bridgman Method (VBM). As-grown crystals were characterized by X-ray diffraction and IR spectrophotometer. It was found that there were two spontaneous cleavage faces which were (112) and (101) orientations respectively. After annealed at 550~600℃ surrounded by the ZnGeP2 powder in vacuum

the infrared transmission of a ZGP wafer with size of 10×10×2mm3 is above 55% in the region of 2~12μm .

关键词

磷锗锌单晶生长垂直布里奇曼法X射线衍射红外透过率

Keywords

ZnGeP2single crystal growthVBMX-ray diffractioninfrared transmission

references

Buehler E,Wernick J H,Wiley J D,The ZnP2-Ge system and growth of single crystals of ZnGeP2,Journal of Electronic Materials,1973(3).

Lind M D,Grant R W,Structural dependence of birefringence in the chalcopyrite structure.Refinement of the structural parameters of ZnGeP2 and ZnSiAs2,The Journal of Chemical Physics,1973(1).

杨春晖.张建新型中、远红外波段非线性光学晶体磷化锗锌 [J].

Andreev Y,Geiko P,Kotsubinskaya E,ZnGeP2 crystal:applications for visualization or IR signals,Proceedings of SPIE,2004.

Kenneth H F,Fernelius N C,Goldstein J T,Advances in nonlinear optical crystals,Proceedings of SPIE,2005.

苏旭.刘涛.张刚.陈兴国.秦金贵.陈创天中红外波段二阶非线性光学晶体材料研究进展 [J].

Verozubova G A,Gribenyukov A I,Korotkova V V,ZnGeP2 synthesis and growth from melt,Materials Science and Engineering B:Solid State Materials for Advanced Technology,1997.

Hobgood H M,Henningsen T,Thomas R N,ZnGeP2 grown by the liquid encapsulated czochralski method,Journal of Applied Physics,1993(8).

Gehlhoff W,Azamat D,Hoffmann A,Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR,Journal of Physics and Chemistry of Solids,2003.

卓洪升.顾庆天.房昌水红外非线性材料ZnGeP2的研究(Ⅰ)--多晶料的合成 [J].

Shimony Y,Raz O,Kimmel G,On defects in tetragonal ZnGeP2 crystals,Optical Materials,1999.

Zapol P,Pandey R,Gale J,Atomistic calculations of defects in ZnGeP2,Journal of Applied Physics,1996(2).

更多指标>

Views

698

下载量

CNKI被引量

Alert me when the article has been cited

提交

Tools

Publicity Resources

The Preparation and Application of Al-pillared Vermiculite in Phosphate Adsorption

Time Duration Effect of Plasma Nitriding on Fatigue Behavior of S45C Steel

Related Author

No data

Related Institution

四川大学分析测试中心四川

四川大学化学工程学院四川

四川大学建筑与环境学院四川

河南理工大学材料科学与工程学院

吉林大学超硬材料国家重点实验室

⁰