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工程科学与技术:2008,40(6):101-104
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磷锗锌(ZnGeP2)单晶体生长研究
(四川大学材料科学与工程学院)
Studies on Growth of ZnGeP2 Single Crystals
(School of Materials Sci. and Eng. , Sichuan Univ. , Chengdu , China)
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投稿时间:2008-05-05    修订日期:2008-09-03
中文摘要: 摘 要:以高纯(6N) Ge、Zn、P单质为原料,按化学计量比并富P 0.1~0.3%配料,在特殊设计的密封安瓿中,采用改进的两温区气相输运法(MTVM)和机械振荡技术合成出单相致密的ZnGeP2多晶原料。以此为原料,采用改进的垂直布里奇曼法(VBM)生长出尺寸为Φ15mm×25mm的 ZnGeP2单晶体,呈黑灰色,外观完整、无裂纹。对晶体进行解理试验发现,其存在(112)和(101)两个易解理面;对10×10×2mm3 ZnGeP2晶片,采用同成分粉末包裹,在550~600℃真空退火后,经红外透过率测试结果显示:在2~12μm波段内红外透过率可达55%以上。
Abstract:Abstract:Single-phase ZnGeP2 polycrystals were successfully synthesized by modified two-zone vapor-transporting method(MTVM)and mechanic oscillations technique, directly from high pure(6N) Zn, Ge, and red P elements according to the ZnGeP2 stoichiometry and 0.1~0.3% P-rich. The synthesis reaction was carried in a special quartz ampoule to prevent the ampoule exploding by controlling the temperature. With the presynthesized polycrystalline, the integral and gray-black ZnGeP2 single crystals with size of Φ15mm×25mm were obtained by modified Vertical Bridgman Method (VBM). As-grown crystals were characterized by X-ray diffraction and IR spectrophotometer. It was found that there were two spontaneous cleavage faces which were (112) and (101) orientations respectively. After annealed at 550~600℃ surrounded by the ZnGeP2 powder in vacuum, the infrared transmission of a ZGP wafer with size of 10×10×2mm3 is above 55% in the region of 2~12μm .
文章编号:200800129     中图分类号:    文献标志码:
基金项目:国家自然科学基金
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赵欣,朱世富,赵北君,杨慧光,孙永强,程江,陈宝军,何知宇.磷锗锌(ZnGeP2)单晶体生长研究[J].工程科学与技术,2008,40(6):101-104.
Zhao Xin,Zhu Shi-fu,zhao Bei-jun,杨慧光,孙永强,程江,陈宝军,何知宇.Studies on Growth of ZnGeP2 Single Crystals[J].Advanced Engineering Sciences,2008,40(6):101-104.